ug8at-dt, ugf8at-dt, ugb8at-dt vishay semiconductors formerly general semiconductor document number 88765 www.vishay.com 18-feb-02 1 ultrafast rectifier reverse voltage 50 to 200 v forward current 8.0 a reverse recovery time 20 ns 0.08 (2.032) 0.24 (6.096) 0.42 (10.66) 0.63 (17.02) 0.12 (3.05) 0.33 (8.38) mounting pad layout to-263ab 0.380 (9.65) 0.411 (10.45) 0.320 (8.13) 0.360 (9.14) 0.591 (15.00) 0.624 (15.85) 1 2 0.245 (6.22) min k 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) k 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.140 (3.56) 0.090 (2.29) 0.110 (2.79) 0.047 (1.19) 0.055 (1.40) pin 1 pin 2 k - heatsink 0-0.01 (0-0.254) 0.060 (1.52) 0.405 (10.27) 0.383 (9.72) 0.191 (4.85) 0.171 (4.35) 0.600 (15.5) 0.580 (14.5) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027 (0.69) 0.140 (3.56) 0.130 (3.30) 0.350 (8.89) 0.330 (8.38) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) 0.122 (3.08) 0.110 (2.80) 0.100 (2.54) 0.022 (0.55) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 12 pin dia. dia. pin 1 pin 2 0.676 (17.2) 0.646 (16.4) ito-220ac (ugf8at-dt) to-220ac (ug8at-dt) dimensions in inches and (millimeters) to-263ab (ugb8at-dt) 0.154 (3.91) 0.148 (3.74) dia. 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.410 (10.41) 0.390 (9.91) 0.635 (16.13) 0.625 (15.87) 0.603 (15.32) 0.573 (14.55) pin 0.415 (10.54) max. pin 1 pin 2 case 0.370 (9.40) 0.360 (9.14) features ?plastic package has underwriters laboratories flammability classification 94v-0 ?high reverse energy capability ?excellent high temperature switching ?high temperature soldering guaranteed: 250?/10 seconds at terminals ?glass passivated chip junction mechanical data case: jedec to-220ac, ito-220ac & to-263ab molded plastic body terminals: plated leads, solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in-lbs maximum weight: 0.08 oz., 2.24 g
ug8at-dt, ugf8at-dt, ugb8at-dt vishay semiconductors formerly general semiconductor www.vishay.com document number 88765 2 18-feb-02 maximum ratings (t c = 25? unless otherwise noted) parameter symbol ug8at ug8bt ug8ct ug8dt unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current at t c = 100? i f(av) 8.0 a peak forward surge current 8.3ms single half sine-wave superimposed i fsm 150 a on rated load (jedec method) at t c = 100? operating junction and storage temperature range t j , t stg ?5 to +150 ? rms isolation voltage (ugf type only) from terminals to 4500 (note 1) heatsink with t = 1.0 second, rh 30% v isol 3500 (note 2) v 1500 (note 3) electrical characteristics (t c = 25? unless otherwise noted) parameter symbol ug8at ug8bt ug8ct ug8dt unit maximum instantaneous forward voltage at 8.0 1.0 20a v f 1.2 v (note 4) 5.0a,t j = 150? 0.95 maximum dc reverse current t j =25? 10 at rated dc blocking voltage t j =100? i r 300 a maximum reverse recovery time at i f = 0.5a, i r = 1.0a, i rr = 0.25a t rr 20 ns maximum reverse recovery time at t j =25? 30 i f =8.0a, v r =30v, di/dt=50a/ s, i rr =10% i rm t j =100? t rr 50 ns maximum recovered stored charged at t j =25? 20 i f =8.0a, v r =30v, di/dt=50a/ s t j =100? q rr 45 nc typical junction capacitance at 4.0v, 1mhz c j 45 pf thermal characteristics (t c = 25? unless otherwise noted) parameter symbol ug8at ugf8at ugb8at unit typical thermal resistance from junction to case r jc 4.0 5.0 4.0 ?/w notes: (1) clip mounting (on case), where lead does not overlap heatsink with 0.110 offset (2) clip mounting (on case), where leads do overlap heatsink (3) screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19? (4) pulse test: 300 s pulse width, 1% duty cycle
ug8at-dt, ugf8at-dt, ugb8at-dt vishay semiconductors formerly general semiconductor document number 88765 www.vishay.com 18-feb-02 3 ratings and characteristic curves (t a = 25? unless otherwise noted) 10 100 1000 1 100 10 fig. 2 ?maximum non-repetitive peak forward surge current peak forward surge current (a) number of cycles at 60 h z 0 6.0 8.0 10 12 0 25 50 75 100 125 150 175 fig. 1 ?maximum forward current derating curve average forward rectified current (a) ambient temperature ( c) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward voltage (v) 020 60 40 100 80 fig. 4 ?typical reverse characteristics instantaneous reverse leakage current ( a) percent of rated peak reverse voltage (%) 4.0 2.0 resistive or inductive load 0.01 0.1 10 100 1 instantaneous forward current (a) t j = 25 c t j = 100 c t j = 125 c reverse voltage (v) junction capacitance (pf) 0.1 1 10 100 100 10 1 0.01 0.1 10 1 100 1,000 fig. 6 ?typical junction capacitance t c = 100 c 8.3ms single half sine-wave (jedec method) t j = 25 c pulse width = 300 s 1% duty cycle t j = 25 c f = 1.0 mh z vsig = 50mvp-p fig. 3 ?typical instantaneous forward characteristics 0 30 40 50 60 0 25 50 75 100 125 150 175 fig. 5 ?reverse switching characteristics recovered store charge/reverse recovery time (nc/ns) junction temperature ( c) 20 10 i f = 4.0a v r = 30v di/dt = 150a/ s di/dt = 100a/ s 20a/ s 50a/ s 100a/ s 50a/ s 150a/ s 20a/ s trr qrr
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